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  unisonic technologies co., ltd uf3n25z power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r502-760.e 3a, 250v n-channel power mosfet ? description the utc uf3n25z is an n-channel enhancement mode power mosfet using utc? s advanced technology to provide customers with a minimum on-st ate resistance, low gate charge and superior switching performance. ? features * r ds(on) <2 ? @ v gs =10v * high switching speed * typically 3.2nc low gate charge * 100% avalanche tested ? symbol to-252 1 to-251 sot-223 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UF3N25ZL-AA3-R uf3n25zg-aa3-r sot-223 g d s tape reel uf3n25zl-tm3-t uf3n25zg-tm3-t to-251 g d s tube uf3n25zl-tn3-r uf3n25zg-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
uf3n25z power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-760.e ? marking information package marking sot-223 to-251 to-252
uf3n25z power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-760.e ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 250 v gate-source voltage v gss 20 v continuous drain current continuous i d 3 a pulsed i dm 12 a avalanche energy e as 52 mj power dissipation sot-223 p d 0.8 w to-251/to-252 1.14 w junction temperature t j +150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 250 v drain-source leakage current i dss v ds =250v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v 10 a reverse v gs =-20v, v ds =0v -10 a on characteristics gate threshold voltage v gs ( th ) i d =250a 2 4 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =3a 2 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1mhz 190 pf output capacitance c oss 80 pf reverse transfer capacitance c rss 30 pf switching parameters total gate charge q g v dd =50v, i d =1.3a, i g =100a, v gs =10v 3.2 5.5 nc gate to source charge q gs 0.64 nc gate to drain charge q gd 1.6 nc turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? , v gs =0~10v 30 35 ns rise time t r 118 125 ns turn-off delay time t d ( off ) 50 58 ns fall-time t f 90 110 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 3 a maximum body-diode pulsed current i sm 12 a drain-source diode forward voltage v sd i s =3a 1.3 v
uf3n25z power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-760.e ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0.7 0 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 2.1 2.8 4.2 1.4 3.5 0 50 100 150 200 250 300 0 60 180 240 300 120 0 50 100 150 200 250 300 v ds =v gs drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 0.2 0.5 0 0.1 0.2 0.3 0.4 v gs =10v 0.1 0.3 0.4 0.6 0.6 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current, i d (a) 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 0.5 1.2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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